TIME DEPENDENCE OF ENERGY BAND GAP OF ELECTRODEPOSITED ALUMINUM SELENIDE Al2Se3

Abstract

In this paper, Aluminum selenide (Al2Se3) thin films are synthesized electrochemically using cathodic deposition technique in which graphite was used as a cathode while carbon as an anode. Synthesis is done at 700 C temperature from an aqueous solution of analytical grade selenium dioxide (SeO2), and Aluminum chloride (AlCl2.7H2O). Aluminum selenide thin films from a controlled medium (pH =2.5) are deposited on fluorine doped tin oxide (FTO) substrate using different time of deposition 3mins, 6mins, 9mins, 12mins and 15mins. Further investigation was done to study the effect of deposition time. The films are characterized for their; electrical conductivity, structural, morphological, and optical properties of the deposited films have been studied using photoelectrochemical (PEC) cell measurement, X-ray diffraction, scanning electron microscopy (SEM) and UV-visibile spectroscopy. These various characterizations reveal the successful fabrication of Al2Se3 thin films.